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Ferroelectric Random Access Memory : FOLDOC | Ferroelectric Random Access Memory (FRAM) A type of non-volatile read/write {random access} semiconductor memory. FRAM combines the advantages of SRAM - writing is roughly as fast as reading, and EPROM - non-volatility and in-circuit programmability. Current (Feb 1997) disadvantages are high cost and low density, but that may change in the future. Density is currently at most 32KB on a chip, compared with 512KB for SRAM, 1MB for EPROM and 8MB for DRAM. A ferroelectric memory cell consists of a ferroelectric capacitor and a MOS transistor. Its construction is similar to the storage cell of a DRAM. The difference is in the dielectric properties of the material between the capacitor's electrodes. This material has a high dielectric constant and can be polarized by an electric field. The polarisation remains until it gets reversed by an opposite electrical field. This makes the memory non-volatile. Note that ferroelectric material, despite its na
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